FMMT449 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FMMT449
TRANSISTOR (NPN)
FEATURES
 Low Equivalent On-Resistance
SOT–23
MARKING: 449
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
50
VCEO Collector-Emitter Voltage
30
VEBO Emitter-Base Voltage
5
IC
Collector Current
1
PC
Collector Power Dissipation
200
RΘJA Thermal Resistance From Junction To Ambient
625
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
A
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max Unit
Collector-base breakdown voltage
V(BR)CBO IC=1mA, IE=0
50
V
Collector-emitter breakdown voltage
V(BR)CEO IC=10mA, IB=0
30
V
Emitter-base breakdown voltage
V(BR)EBO IE=100µA, IC=0
5
V
Collector cut-off current
ICBO
VCB=40V, IE=0
0.1
µA
Emitter cut-off current
IEBO
VEB=4V, IC=0
0.1
µA
hFE(1) * VCE=2V, IC=50mA
70
DC current gain
hFE(2) * VCE=2V, IC=500mA
100
300
hFE(3) * VCE=2V, IC=1A
80
hFE(4) * VCE=2V, IC=2A
40
Collector-emitter saturation voltage
VCE(sat)1*
VCE(sat)2*
IC=1A, IB=100mA
IC=2A, IB=200mA
0.5
V
1
V
Base-emitter saturation voltage
VBE(sat)* IC=1A, IB=100mA
1.25
V
Base-emitter voltage
VBE*
VCE=2V, IC=1A
1
V
Transition frequency
VCE=10V,IC=50mA,
fT
150
f=100MHz
MHz
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
15
pF
*Pulse test
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semiconductor
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