FMMT4124 Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ NPN ）

FMMT4124
TRANSISTOR (NPN)
FEATURES
 Switching Application
MARKING:ZC
SOT–23
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
30
VCEO Collector-Emitter Voltage
25
VEBO Emitter-Base Voltage
5
IC
Collector Current
200
PC
Collector Power Dissipation
330
RΘJA Thermal Resistance From Junction To Ambient
378
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Symbol
V(BR)CBO
V(BR)CEO*
Test conditions
IC=10µA, IE=0
IC=1mA, IB=0
Min
Typ
Max Unit
30
V
25
V
Emitter-base breakdown voltage
V(BR)EBO IE=10µA, IC=0
5
V
Collector cut-off current
Emitter cut-off current
ICBO
VCB=20V, IE=0
IEBO
VEB=3V, IC=0
50
nA
50
nA
DC current gain
hFE(1) * VCE=1V, IC=2mA
120
360
hFE(2) * VCE=1V, IC=50mA
60
Collector-emitter saturation voltage
VCE(sat)* IC=50mA, IB=5mA
0.3
V
Base-emitter saturation voltage
VBE(sat)* IC=50mA, IB=5mA
Transition frequency
VCE=20V,IC=10mA,
fT
300
f=100MHz
0.95
V
MHz
Collector output capacitance
Emitter input capacitance
Cob
VCB=5V, IE=0, f=140KHz
CIb
VBE=0.5V, IE=0, f=140KHz
4
pF
8
pF
*Pulse test
JinYu
semiconductor
www.htsemi.com