FDN335N Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – N-Channel 2.5V Specified PowerTrenchTM MOSFET

20V N-Channel Enhancement Mode MOSFET
FDN335N
VDS= 20V
RDS(ON), Vgs@ 2.5V, Ids@ 1.7A= 70m Ω
RDS(ON), Vgs@ 2.5V, Ids@ 1.5A= 100mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
D
SOT-23(PACKAGE)
G
S
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0
0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90
1.00
0.10
0.40
0.85
REF.
1.30
0.20
-
1.15
0° 10°
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ¹⁾
Maximum Power Dissipation ²⁾
Operating Junction and Storage Temperature Range
Junction-to-Ambient Thermal Resistance (PCB mounted) ²⁾
Junction-to-Ambient Thermal Resistance (PCB mounted) ³⁾
TA = 25^o
TA = 75^oC
Symbol
V_DS
V_GS
I_D
I_DM
P_D
T_J, T_stg
R_thJA
Limit
20
±8
1.7
8
1.25
0.8
-55 to 150
100
166
Notes
1) _{Pulse width limited by maximum junction temperature.}
2) _{Surface Mounted on FR4 Board, t v 5 sec.}
3) Surface Mounted on FR4 Board.
Unit
V
A
W
o_C
o_C/W
JinYu
semiconductor
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