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| FCX591 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR | |||
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FCX591
TRANSISTOR (PNP)
FEATURES
Power dissipation
SOT-89
1. BASE
MARKING:P1
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current âContinuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-80
-60
-5
-1
0.5
150
-65-150
Units
V
V
V
A
W
â
â
2. COLLECTOR
3. EMITTER
1
2
3
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector- Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO*
V(BR)EBO
ICBO
IEBO
ICES
hFE*
VCE(sat) *
VBE(sat) *
VBE*
fT
Cob
Test conditions
IC=-100μA , IE=0
IC= -10mA , IB=0
IE=-100μA, IC=0
VCB=-60 V , IE=0
VEB=-4 V , IC=0
VCES=-60 V, IE=0
VCE=-5V, IC= -1mA
VCE=-5V, IC= -500mA
VCE=-5V, IC= -1A
VCE=-5V, IC= -2A
IC=-500 mA, IB= -50mA
IC=-1A, IB= -100mA
IC=-1A, IB= -100mA
VCE=-5V, IC= -1A
VCE= -10V, IC=- 50mA
f =100MHz
VCB=-10V, f=1MHz
MIN MAX
-80
-60
-5
-0.1
-0.1
-0.1
100
100 300
80
15
-0.3
-0.6
-1.2
-1
150
10
UNIT
V
V
V
μA
μA
μA
V
V
V
MHz
pF
*Pulse width=300s. Duty cycle 2%
JinYu
semiconductor
www.htsemi.com
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