ES1A Datasheet, PDF (1/3 Pages) Pan Jit International Inc. – SURFACE MOUNT SUPERFAST RECTIFIER

ES1A THRU _ES1M
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unt Applications</sub>
• Extremely Low Thermal Resistance
• Easy Pick And Place
• High Temp Soldering: 250°C for 10 Seconds At Terminals
• Superfast Recovery Times For High Efficiency
Maximum Ratings
• Operating Temperature: -50°C to +150°C
• Storage Temperature: -50°C to +150°C
• Maximum Thermal Resistance; 15 °C/W Junction To Lead
Catalog
Number
ES1A
ES1B
ES1C
ES1D
ES1G
ES1J
ES1K
Device
Marking
ES1A
ES1B
ES1C
ES1D
ES1G
ES1J
ES1K
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
150V
200V
400V
600V
800V
Maximum
RMS
Voltage
35V
70V
105V
140V
280V
420V
560V
Maximum
DC
Blocking
Voltage
50V
100V
150V
200V
400V
600V
800V
ES1M
ES1M
1000V
700V
1000V
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
ES1A-D
ES1G-K
ES1M
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
I_F(AV)
I_FSM
V_F
I_R
1.0A
30A
T_J = 75°C
8.3ms, half sine
.975V
1.35V
1.60V
I_FM = 1.0A;
T_J = 25°C*
5µA T_J = 25°C
100µA T_J = 100°C
Maximum Reverse
Recovery Time
ES1A-D
ES1G-K
T_rr
ES1M
Typical Junction
C_J
Capacitance
50ns
60ns
100ns
45pF
I_F=0.5A, I_R=1.0A,
I_rr=0.25A
Measured at
1.0MHz, V_R=4.0V
*Pulse test: Pulse width 200 µsec, Duty cycle 2%
1 Amp Super Fast
Recovery
Silicon Rectifier
50 to 1000 Volts
DO-214AC
(SMAJ) (High Profile)
H
Cathode Band
J
A
C
E
D
F
G
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.078
.116
B
.067
.089
C
.002
.008
D
---
.02
E
.035
.055
F
.065
.096
G
.205
.224
H
.160
.180
J
.100
.112
MM
MIN
1.98
1.70
.05
---
.89
1.65
5.21
4.06
2.57
B
MAX
2.95
2.25
.20
.51
1.40
2.45
5.69
4.57
2.84
NOTE
SUGGESTED SOLDER
PAD LAYOUT
0.090”
0.085”
0.070”
JinYu
semiconductor
www.htsemi.com