EMF23 Datasheet, PDF (1/2 Pages) Rohm – Power management (dual transistors)

Power management (dual transistors)
EMF23
FEATURES
z 2SA1774 and DTC114E are housed independently in a package
z Power management circuit
z Power switching circuit in a single package
z Mounting cost and area can be cut in half
MARKING: F23
SOT-563
1
TR1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-60
-50
-6
-150
150
150
-55-150
Units
V
V
V
mA
mW
℃
℃
TR1 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V_(BR)CBO I_C=-50μA,I_E=0
V_(BR)CEO I_C=-1mA,I_B=0
V_(BR)EBO I_E=-50μA,I_C=0
I_CBO
V_CB=-60V,I_E=0
I_EBO
V_EB=-6V,I_C=0
h_FE
V_CE=-6V,I_C=-1mA
V_CE(sat) I_C=-50mA,I_B=-5mA
f_T
V_CE=-12V,I_C=-2mA,f=100MHz
C_ob
V_CB=-12V,I_E=0,f=1MHz
Min Typ
-60
-50
-6
180
140
Max Unit
V
V
V
-0.1 μA
-0.1 μA
390
-0.5
V
MHz
5
pF
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05