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| D882 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – TO-126 Plastic-Encapsulate Transistors | |||
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D882
TRANSISTOR (NPN)
FEATURES
Power dissipation
SOT-89
1. BASE
MAXIMUM RATINGS (TA=25â unless otherwise noted)
2. COLLECTOR
3. EMITTER
1
2
3
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
40
30
6
3
0.5
150
-55-150
Units
V
V
V
A
W
â
â
ELECTRICAL CHARACTERISTICS(Tamb=25â unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
Collector-base breakdown voltage
V(BR)CBO IC = 100μA, IE=0
40
Collector-emitter breakdown voltage
V(BR)CEO IC = 10mA, IB=0
30
Emitter-base breakdown voltage
V(BR)EBO IE= 100μA, IC=0
6
Collector cut-off current
ICBO
VCB= 40V, IE=0
1
Collector cut-off current
ICEO
VCE= 30V, IB=0
10
Emitter cut-off current
IEBO
VEB= 6V, IC=0
1
DC current gain
hFE(1)
VCE=2V, IC= 1A
60
400
hFE(2)
VCE=2V, IC= 100mA
32
Collector-emitter saturation voltage
VCE(sat)
IC= 2A, IB= 0.2 A
0.5
Base-emitter saturation voltage
VBE(sat)
IC= 2A, IB= 0.2 A
1.5
Transition frequency
VCE= 5V , Ic=0.1A
fT
50
f =10MHz
UNIT
V
V
V
µA
µA
µA
V
V
MHz
CLASSIFICATION OF hFE(1)
Rank
R
Range
60-120
O
100-200
Y
160-320
GR
200-400
JinYu
semiconductor
www.htsemi.com
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