BST39 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN high-voltage transistors

TRANSISTOR (NPN)
FEATURES
z Low Current
z High Voltage
APPLICATIONS
z General Purpose Switching and Amplification
MARKING:BCT39:AT1
BCT40:AT2
BST39,BST40
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
BST39
BST40
Collector-Emitter Voltage BST39
BST40
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
400
300
350
250
5
100
500
250
150
-55~+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
Min Typ
BST39
400
V_(BR)CBO I_C=100µA,I_E=0
BST40
300
BST39
350
V_(BR)CEO I_C=1mA,I_B=0
BST40
250
V_(BR)EBO I_E=100µA,I_C=0
5
I_CBO
V_CB=300V,I_E=0
I_EBO
V_EB=5V,I_C=0
h_FE
V_CE=10V, I_C=20mA
40
V_CE(sat) I_C=50mA,I_B=4mA
f_T
VCE=10V,IC=10mA, f=100MHz 70
C_ob
V_CB=10V, I_E=0, f=1MHz
Max
20
100
0.5
2
Unit
V
V
V
nA
nA
V
MHz
pF
JinYu
semiconductor
www.htsemi.com