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| BSR33 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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BRS33
TRANSISTOR (PNP)
FEATURES
z Low Voltage
z High Current
z Complement to BSR43
AAPLICATIONS
z Medium Power Transistor
MARKING:BR4
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-90
-80
-5
-1
500
250
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
*Pulse test
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)*
hFE(2)*
hFE(3)*
VCE(sat)*
VBE(sat)*
fT
Test conditions
IC=-100µA,IE=0
IC=-1mA,IB=0
IE=-100µA,IC=0
VCB=-60V,IE=0
VEB=-5V,IC=0
VCE=-5V, IC=0.1mA
VCE=-5V, IC=-100mA
VCE=-5V, IC=-500mA
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
VCE=-10V,IC=-50mA, f=100MHz
Min Typ Max
-90
-80
-5
-100
-100
30
100
300
50
-0.25
-0.5
-1
-1.2
100
Unit
V
V
V
nA
nA
V
V
V
V
MHz
JinYu
semiconductor
www.htsemi.com
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