BFS20 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN medium frequency transistor

BFS20
TRANSISTOR (NPN)
FEATURES
 Very Low Feedback Capacitance
 Low Current
 Low Voltage
APPLICATIONS
 IF and VHF Applications in Thick and Thin-Film Circuits
MARKING:G11
SOT–23
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
30
VCEO Collector-Emitter Voltage
20
VEBO Emitter-Base Voltage
4
IC
Collector Current
25
PC
Collector Power Dissipation
250
RΘJA Thermal Resistance From Junction To Ambient
500
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
Min
Typ
Max Unit
V(BR)CBO IC=100µA, IE=0
30
V
V(BR)CEO IC=0.1mA, IB=0
20
V
V(BR)EBO IE=100µA, IC=0
4
V
ICBO
VCB=20V, IE=0
0.1
µA
ICEO
VCE=15V, IB=0
0.1
µA
IEBO
VEB=4V, IC=0
0.1
µA
hFE
VCE=10V, IC=7mA
40
120
VCE(sat) IC=10mA, IB=1mA
0.3
V
VBE
VCE=10V, IC=7mA
0.9
V
fT
VCE=10V,IC=5mA, f=100MHz 275
MHz
Cob
VCB=10V, IE=0, f=1MHz
1
pF
JinYu
semiconductor
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