BC869 Datasheet, PDF (1/1 Pages) NXP Semiconductors – PNP medium power transistor

BC68 9
TRANSISTOR (PNP)
FEATURES
 NPN Complement to BC868
 Low Voltage
 High Current
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-32
-20
-5
-1
500
250
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base -emitter voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE
fT
Test conditions
Min Typ
IC=-100µA,IE=0
-32
IC=-1mA,IB=0
-20
IE=-100µA,IC=0
-5
VCB=-25V,IE=0
VEB=-5V,IC=0
VCE=-10V, IC=-5mA
50
VCE=-1V, IC=-0.5A
100
VCE=-1V, IC=-1A
60
IC=-1A,IB=-0.1A
VCE=-1V, IC=-1A
VCE=-10V, IC=-5mA
-0.62
VCE=-5V,IC=-10mA, f=100MHz 40
Max
-0.1
-0.1
375
-0.5
-1
CLASSIFICATION OF hFE(2)
RANK
RANGE
MARKING
BC869
100–375
CEC
BC869-16
100–250
CGC
BC869-25
160–375
CHC
Unit
V
V
V
µA
µA
V
V
V
MHz
JinYu
semiconductor
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