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| BC868 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN medium power transistor | |||
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TRANSISTOR (NPN)
FEATURES
z High current
z Low voltage
SOT-89
BC68 8
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
32
20
5
1
500
150
-55-150
Units
V
V
V
A
mW
â
â
1. BASE
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=100μA,IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=1mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=100μA,IC=0
Collector cut-off current
ICBO
VCB=25V,IE=0
Emitter cut-off current
IEBO
VEB=5V,IC=0
hFE(1) VCE=1V,IC=500mA
DC current gain
hFE(2) VCE=1V,IC=1A
hFE(3) VCE=10V,IC=5mA
Collector-emitter saturation voltage
VCE(sat) IC=1A,IB=100mA
Base-emitter voltage
VBE1
VBE2
VCE=10V,IC=5mA
VCE=1V,IC=1A
Transition frequency
CLASSIFICATION OF hFE(1)
Rank
fT
BC868-10
VCE=5V,IC=10mA,f=100MHz
BC868-16
Range
85-160
100-250
Marking
CBC
CCC
MIN TYP MAX UNIT
32
V
20
V
5
V
0.1
μA
0.1
μA
85
375
60
50
0.5
V
0.62
V
1
V
40
MHz
BC868-25
160-375
CDC
JinYu
semiconductor
www.htsemi.com
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