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| BC857BV Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP general purpose double transistor | |||
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DUAL TRANSISTOR (PNP)
BC857BV
FEATURES
z Epitaxial Die Construction
z Complementary NPN Types Available
(BC847BV)
z Ultra-Small Surface Mount Package
SOT-563
Marking: K5V
MAXIMUM RATINGS (TA=25â unless otherwise noted )
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
-50
VCEO
Collector-Emitter Voltage
-45
VEBO
Emitter-Base Voltage
-5
IC
Collector Current -Continuous
-0.1
PC
Collector Power Dissipation
0.15
RθJA
Thermal Resistance. Junction to Ambient Air
833
TJ
Junction Temperature
150
Tstg
Storage Temperature
-55 to +150
Units
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS(Tamb=25â unless otherwise specified)
Parameter
Symbol Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO IC=-10μA,IE=0
-50
Collector-emitter breakdown voltage
V(BR)CEO IC=-10mA,IB=0
-45
Emitter-base breakdown voltage
V(BR)EBO IE=-1μA,IC=0
-5
Collector cut-off current
ICBO
VCB=-30V,IE=0
DC current gain
hFE
VCE=-5V,IC=-2mA
220
Collector-emitter saturation voltage
VCE(sat)(1) IC=-10mA,IB=-0.5mA
VCE(sat)(2) IC=-100mA,IB=-5mA
Base-emitter saturation voltage
VBE(sat)(1) IC=-10mA,IB=-0.5mA
VBE(sat)(2) IC=-100mA,IB=-5mA
Base-emitter voltage
VBE(1) VCE=-5V,IC=-2mA
-0.6
VBE(2) VCE=-5V,IC=-10mA
Transition frequency
fT
VCE=-5V,IC=-10mA,f=100MHz
100
Collector output capacitance
Cob
VCB=-10V,IE=0,f=1MHz
Noise figure
VCE=-5V,Ic=-0.2mA,
NF
f=1kHZ,Rs=2Kâ¦,BW=200Hz
1
JinYu
semiconductor
www.htsemi.com
TYP MAX UNIT
V
V
V
-15
nA
475
-0.1
V
-0.4
V
-0.7
V
-0.9
V
-0.75 V
-0.82 V
MHz
4.5
pF
10
dB
Date:2011/ 05
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