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| BC847BV Datasheet, PDF (1/2 Pages) Diodes Incorporated – NPN DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |||
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DUAL TRANSISTOR (NPN)
BC847BV
FEATURES
z Epitaxial Die Construction
z Complementary PNP Type Available
(BC857BV)
z Ultra-Small Surface Mount Package
SOT-563
Marking: K4V
MAXIMUM RATINGS(TA=25â unless otherwise noted)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
50
VCEO
Collector-Emitter Voltage
45
VEBO
Emitter-Base Voltage
6
IC
Collector Current -Continuous
0.1
PC
Collector Power Dissipation
0.15
RθJA
Thermal Resistance. Junction to Ambient Air
833
TJ
Junction Temperature
150
Tstg
Storage Temperature
-55 to +150
Units
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Output capacitance
Noise Figure
Symbol Test conditions
V(BR)CBO IC=10μA,IE=0
V(BR)CEO IC=10mA,IB=0
V(BR)EBO IE=1μA,IC=0
ICBO
VCB=30V,IE=0
IEBO
VEB=5V,IC=0
hFE(1)
VCE(sat)
VBE(sat)
VBE
fT
VCE=5V,IC=2mA
IC=10mA,IB=0.5mA
IC=100mA,IB=5mA
IC=10mA,IB=0.5mA
IC=100mA,IB=5mA
VCE=5V,IC=2mA
VCE=5V,IC=10mA
VCE=5V,IC=10mA,f=100MHz
Cob
VCB=10V,IE=0,f=1MHz
VCE=5V,Rs=2kâ¦,
NF
f=1kHz,BW=200Hz
MIN TYP MAX UNIT
50
V
45
V
6
V
15
nA
100 nA
200
450
100
mV
300
700
mV
900
580 660 700
mV
770
100
MHz
4.5
pF
10
dB
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05
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