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| BC817 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN general purpose transistor | |||
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TRANSISTOR (NPN)
BC817-16
BC817-25
BC817-40
BC718
SOT-23
FEATURES
z For general AF applications
z High collector current
z High current gain
z Low collector-emitter saturation voltage
z Complementary types: BC807 (PNP)
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
45
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
0.5
A
PC
Collector Power Dissipation
0.3
W
Tj
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
VCBO
IC= 10μA, IE=0
50
Collector-emitter breakdown voltage
VCEO
IC= 10mA, IB=0
45
Emitter-base breakdown voltage
VEBO
IE= 1μA, IC=0
5
Collector cut-off current
ICBO
VCB= 45 V , IE=0
Emitter cut-off current
IEBO
VEB= 4V, IC=0
DC current gain
hFE(1)
VCE= 1V, IC= 100mA
100
hFE(2)
VCE= 1V, IC= 500mA
40
Collector-emitter saturation voltage
VCE(sat) IC= 500mA, IB= 50mA
Base-emitter saturation voltage
VBE(sat) IC= 500mA, IB= 50mA
Base-emitter voltage
Collecter capactiance
Transition frequency
VBE
VCE= 1 V, IC= 500mA
Cob
VCB=10V ,f=1MHz
10
fT
VCE= 5 V, IC= 10mA
100
f=100MHz
MAX
0.1
0.1
600
UNIT
V
V
V
μA
μA
0.7
V
1.2
V
1.2
V
pF
MHz
CLASSIFICATION OF hFE (1)
Rank
Range
Marking
BC817-16
100-250
6A
BC817-25
160-400
6B
BC817-40
250-600
6C
JinYu
semiconductor
www.htsemi.com
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