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| BC808 Datasheet, PDF (1/3 Pages) AUK corp – PNP Silicon Transistor (High current application Switching application) | |||
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TRANSISTOR (PNP)
FEATURES
z Suitable for AF-Driver stages and low power output stages
z Complement to BC818
BC08 8
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-30
V
VCEO
Collector-Emitter Voltage
-25
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current âContinuous
-0.8
A
PC*
Collector Power Dissipation
300
mW
Tj
Junction Temperature
150
â
Tstg
Storage Temperature
-65-150
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=-100μA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=-10mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=-100μA, IC=0
Collector cut-off current
ICBO
VCB=-25V, IE=0
Emitter cut-off current
IEBO
VEB=-4V, IC=0
DC current gain
hFE(1)
hFE(2)
VCE=-1V, IC=-100mA
VCE=-1V, IC=-300mA
Collector-emitter saturation voltage
VCE(sat) IC=-500mA, IB=-50mA
Base-emitter voltage
VBE VCE=-1V, IC=-300mA
Transition frequency
fT
VCE=-5V, IC=-10mA, f=50MHz
Collector output capacitance
CLASSIFICATION OF hFE
Rank
Range hFE(1)
Marking
Cob
16
100-250
5E
VCB=-10V, IE=0, f=1MHz
25
160-400
5F
MIN TYP MAX UNIT
-30
V
-25
V
-5
V
-0.1 μA
-0.1 μA
100
630
60
-0.7 V
-1.2 V
100
MHz
12
pF
40
250-630
5G
JinYu
semiconductor
www.htsemi.com
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