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| BC807 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP general purpose transistor | |||
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TRANSISTOR (PNP)
BC807-16
BC807-25
BC807-40
FEATURES
·Ldeally suited for automatic insertion
·epitaxial planar die construction
·complementary NPN type available(BC817)
BC08 7
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
MARKING: 807-16:5A; 807-25:5B; 807-40:5C
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-45
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-0.5
A
PC
Collector Power Dissipation
0.3
W
Tj
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Symbol Test conditions
VCBO IC= -10μA, IE=0
VCEO IC= -10mA, IB=0
VEBO
IE= -1μA, IC=0
ICBO
VCB= -45V, IE=0
MIN
-50
-45
-5
Collector cut-off current
ICEO
VCE= -40V, IB=0
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
IEBO
VEB= -4 V, IC=0
807-16
807-25
807-40
hFE(1)
100
VCE= -1V, IC= -100mA 160
250
VCE(sat) IC=-500mA, IB= -50mA
Base-emitter saturation voltage
Transition frequency
VBE(sat) IC= -500mA, IB= -50mA
fT
VCE= -5V, IC= -10mA
100
f=100MHz
MAX UNIT
V
V
V
-0.1 μA
-0.2 μA
-0.1 μA
250
400
600
-0.7 V
-1.2 V
MHz
JinYu
semiconductor
www.htsemi.com
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