BAS70T Datasheet, PDF (1/2 Pages) Diodes Incorporated – SURFACE MOUNT SCHOTTKY BARRIER DIODE

SCHOTTKY DIODE
FEATURES
z Low Turn-on voltage
z Fast switching
BAS7 0T/-04T/-05T/-06T
SOT-523
BAS70T Marking: 7C
BAS70-04T Marking: 7D
BAS70-05T Marking: 7E
BAS70-06T Marking: 7F
Maximum Ratings @T_A=25℃
Parameter
Peak Repetitive Peak reverse voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Non-Repetitive Peak Forward Surge Current @ t = 1.0s
Power Dissipation
Thermal Resistance Junction to Ambient Air
Storage temperature
Symbol
V_RRM
V_RWM
V_R
I_FM
I_FSM
P_D
R_θJA
T_STG
Limits
70
70
100
150
833
-65-125
Unit
V
mA
A
mW
℃/W
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reveres recovery time
Symbol
Test conditions
V_{(BR) R}
I_R= 10µA
I_R
V_R=50V
V_F
I_F=1mA
I_F=15mA
C_D
V_R=0, f=1MHz
t_rr
I_F=I_R=10mA,I_rr=0.1xI_R,
R_L=100Ω
MIN MAX
UNIT
70
V
100
nA
410
mV
1000
2
pF
5
nS
JinYu
semiconductor
www.htsemi.com