BAS70 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Schottky barrier double diodes

SWITCHING DIODE
FEATURES
z Low Turn-on voltage
z Fast switching
z Also available in lead free version
BAS7 0/-04/-05/-06
SOT-23
BAS70 Marking: 73
BAS70-04 Marking: 74
MAXIMUM RATINGS @T_A=25℃
Symbol
V_R
I_F
P_D
T_J
T_stg
Parameter
DC Voltage
Forward Continuous Current
Power dissipation
Junction Temperature
Storage Temperature
BAS70-05 Marking: 75
BAS70-06 Marking: 76
Value
70
70
200
150
-55-150
Units
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Reverse breakdown voltage
V_{(BR) R}
I_R= 10µA
70
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reveres recovery time
I_R
V_R=50V
V_F
I_F=1mA
I_F=15mA
C_D
V_R=0V f=1MHz
I_F=I_R=10mA,I_rr=0.1xI_R,
t_rr
R_L=100Ω
MAX
120
410
1000
2
5
UNIT
V
nA
mV
pF
nS
JinYu
semiconductor
www.htsemi.com