BAS40W Datasheet, PDF (1/2 Pages) NXP Semiconductors – Schottky barrier double diodes

SCHOTTKY DIODE
FEATURES
z Low Forward Voltage
z Fast Switching
BAS40W/-04/-05/-06
SOT-323
BAS40W MARKING: 43• BAS40W-06 MARKING: 46
Maximum Ratings @T_A=25℃
BAS40W-05 MARKING：45
BAS40W-04 MARKING：44
Parameter
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC Blocking Voltage
Forward continuous Current
Power Dissipation
Thermal Resistance. Junction to Ambient Air
Junction temperature
Storage temperature range
Symbol
V_RRM
V_RWM
V_R
I_FM
P_D
R_θJA
T_J
T_STG
Limits
40
200
150
833
125
-65-125
Unit
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reverse Recovery time
Symbol
Test conditions
MIN
V_(BR)
I_R= 10μA
40
I_R
V_R=30V
V_F
I_F=1mA
I_F=40mA
C_D
V_R=0,f=1MHz
t _rr
I_rr=1mA, I_R=I_F=10mA
R_L=100Ω
MAX
200
380
1000
5
5
UNIT
V
nA
mV
pF
nS
JinYu
semiconductor
www.htsemi.com