BAS40V Datasheet, PDF (1/2 Pages) Diodes Incorporated – DUAL SURFACE MOUNT SCHOTTKY BARRIER DIODE

SCHOTTK Y DIODE
BAS40V
SOT-563
FEATURES
z Low Forward Voltage Drop
z Fast Switching
1
Marking: KAN
Maximum Ratings @T_A=25℃
Parameter
Non-Repetitive Peak reverse voltage
DC Blocking Voltage
Average Rectified Output Current
Power Dissipation
Thermal Resistance. Junction to
Ambient Air
Junction temperature
Storage temperature range
Symbol
V_RM
V_R
I_O
Pd
R_θJA
T_J
T_STG
Limits
40
200
150
833
-55-125
-65-150
Unit
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
MAX
Reverse breakdown voltage
V_(BR)
I_R= 10μA
40
Reverse voltage leakage current
Forward voltage
Total capacitance
Reverse recovery time
I_R
V_R=30V
V_F
I_F=1mA
I_F=40mA
C_T
V_R=0,f=1MHz
t _rr
I_F=10mA, I_R=I_F=1mA
R_L=100Ω
200
380
1000
5
5
UNIT
V
nA
mV
pF
nS
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05