BAS16V Datasheet, PDF (1/2 Pages) Diodes Incorporated – DUAL SURFACE MOUNT SWITCHING DIODE

SIW TCHING DIODE
FEATURES
z Fast Switching Speed
z For General Purpose Switching Applications
z High Conductance
Marking: KAM
BAS16V
SOT-563
1
Maximum Ratings @T_A=25℃
Parameter
Non-Repetitive Peak reverse voltage
Peak Repetitive Peak reverse voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Peak forward surge current @=1.0μs
@=1.0s
Power Dissipation
Thermal Resistance Junction to Ambient
Junction temperature
Storage temperature
Symbol
V_RM
V_RRM
V_RWM
V_R
V_R(RMS)
I_FM
I_O
I_FSM
P_D
R_θJA
T_j
T_STG
Limits
100
75
53
300
200
2.0
1.0
150
833
150
-65~+150
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reveres recovery time
Symbol
Test conditions
MIN
V_{(BR) R}
I_R= 100µA
75
V_R=75V
I_R
V_R=20V
I_F=1mA
V_F
I_F=10mA
I_F=50mA
I_F=150mA
C_D
V_R=0, f=1MHz
I_F=I_R=10mA,I_rr=0.1×I_R,
t_rr
R_L=100Ω
Unit
V
V
V
mA
mA
A
mW
K/W
℃
℃
MAX
1
25
0.715
0.855
1
1.25
2
4
UNIT
V
µA
nA
V
pF
nS
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05