BAP64-05W Datasheet, PDF (1/2 Pages) NXP Semiconductors – Silicon PIN diode

PIN DIODES
FEATURES
z High voltage, current controlled
z RF resistor for RF attenuators and switches
z Low diode capacitance
z Low diode forward resistance
z Low series inductance
z For applications up to 3 GHz
z RF attenuators and switches
BAP64-05W
SOT-323
Marking: 5W
Maximum Ratings @T_A=25℃
Parameter
Continuous reverse voltage
Continuous Forward Current
Power Dissipation
Thermal Resistance Junction to Ambient
Junction temperature
Storage temperature
Symbol
V_R
I_F
P_D
R_θJA
T_j
T_STG
Limits
175
100
200
625
150
-65~+150
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Unit
V
mA
mW
℃/W
℃
℃
Parameter
Reverse voltage leakage current
Forward voltage
Diode capacitance
Diode forward resistance
Charge carrier life time
Symbol
I_R
V_F
C_d
r_D
τL
Test conditions
MIN
V_R=175V
V_R=20V
I_F=50mA
V_R=0, f=1MHz
V_R=1V, f=1MHz
V_R=20V, f=1MHz
I_F=0.5mA, f=100MHz;note1
I_F=1mA, f=100MHz ;note1
I_F=10mA, f=100MHz;note1
I_F=100mA, f=100MHz;note1
when switched from
I_F = 10 mA to I_R = 6 mA; R_L =
100 Ω; measured at I_R =3mA
TYP
0.52
0.37
0.23
20
10
2
0.7
1.55
MAX
10
1
1.1
UNIT
µA
V
pF
0.35
40
20
Ω
3.8
1.35
μS
Series inductance
L_S
IF=100mA, f=100MHz
1.4
nH
Note 1. Guaranteed on AQL basis: inspection level S4,AQL 1.0.
JinYu
semiconductor
www.htsemi.com