BAP64-05 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Silicon PIN diode

BAP64-05
PIN DIODE
FEATURES
z High voltage, current controlled
z RF resistor for RF attenuators and switches
z Low diode capacitance
z Low diode forward resistance
z Low series inductance
z For applications up to 3 GHz
z RF attenuators and switches
Marking: 5K
SOT-23
Maximum Ratings @T_A=25℃
Parameter
Continuous reverse voltage
Continuous Forward Current
Power Dissipation
Thermal Resistance Junction to Ambient
Junction temperature
Storage temperature
Symbol
V_R
I_F
P_D
R_θJA
T_j
T_STG
Limits
175
100
2 50
500
150
-65~+150
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Unit
V
mA
mW
℃/W
℃
℃
Parameter
Reverse voltage leakage current
Forward voltage
Diode capacitance
Diode forward resistance
Charge carrier life time
Series inductance
Symbol
Test conditions
MIN TYP
V_R=175V
I_R
V_R=20V
V_F
I_F=50mA
V_R=0, f=1MHz
0.52
C_d
V_R=1V, f=1MHz
0.37
V_R=20V, f=1MHz
0.23
I_F=0.5mA, f=100MHz;note1
20
I_F=1mA, f=100MHz ;note1
10
r_D
I_F=10mA, f=100MHz;note1
2
I_F=100mA, f=100MHz;note1
0.7
when switched from
τL
I_F = 10 mA to I_R = 6 mA; R_L =
1.55
100 Ω; measured at I_R =3mA
L_S
IF=100mA, f=100MHz
1.4
MAX
10
1
1.1
UNIT
µA
V
pF
0.35
40
20
Ω
3.8
1.35
μS
nH
Note 1. Guaranteed on AQL basis: inspection level S4,AQL 1.0.
JinYu
semiconductor
www.htsemi.com