BAP50-03 Datasheet, PDF (1/2 Pages) NXP Semiconductors – General purpose PIN diode

GENERAL PURPOSE PIN DIODES
FEATURES
y Low diode capacitance
y
MARKING: A81
Low diode forward resistance
BAP50-03
SOD-323
Maximum Ratings and Electrical Characteristics, Single Diode @T_A=25℃
Parameter
Symbol
Limits
Unit
Continuous reverse voltage
Continuous Forward Current
Power Dissipation (T_A=90℃)
Thermal Resistance Junction to
Ambient
Junction temperature
Storage temperature
Electrical Ratings @T_A=25℃
Parameter
Continuous reverse voltage
Forward voltage
Reverse current
Diode capacitance
Diode forward resistance
V_R
I_F
Pd
R_θJA
T_j
T_STG
Symbol
V_R
V_F
I_R
C_d1A
C_d1B
C_d2
C_d3
r_D
r_D
r_D
Min.
50
50
V
50
mA
200
mW
85
K/W
-65~+150
℃
-65~+150
℃
Typ.
Max. Unit
V
1.1
V
100 nA
0.91 pF
1.11 pF
0.55 pF
0.35 pF
40
Ω
25
Ω
5
Ω
Conditions
I_R=10µA
I_F=50mA
V_R=50V
V_R=0V,f=1MHz
V_R=0V,f=1MHz
V_R=1V,f=1MHz
V_R=5V,f=1MHz
I_F=0.5mA , f=100MHz; note1
I_F=1mA , f=100MHz;note1
I_F=10mA , f=100MHz;note1
Note 1. Guaranteed on AQL basis: inspection level S4,AQL 1.0.
JinYu
semiconductor
www.htsemi.com