B5817W Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – SCHOTTKY BARRIER DIODE

B5817W-5819W
SCHOTTKY BARRIER DIODE
FEATURES
For use in low voltage, high frequency inverters
Free wheeling, and polarity protection applications.
MARKING: B5817W: SJ
B5818W:SK
B5819W: SL
SOD-123
+
Maximum Ratings and Electrical Characteristics, Single Diode @T_A=25℃
Parameter
Non-Repetitive Peak reverse voltage
Peak repetitive Peak reverse voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Peak forward surge current @=8.3ms
Repetitive Peak Forward Current
Power Dissipation
Thermal Resistance Junction to
Ambient
Storage temperature
Symbol
V_RM
V_RRM
V_RWM
V_R
V_R(RMS)
I_O
I_FSM
I_FRM
Pd
R_θJA
T_STG
B5817W
20
20
14
B5818W
30
30
21
1
9
1.5
500
250
-65~+150
B5819W
40
40
28
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
-
Unit
V
V
V
A
A
A
mW
℃/W
℃
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Symbol
Test conditions
MIN
V_(BR)
I_R
I_R= 1mA
V_R=20V
V_R=30V
V_R=40V
B5817W
20
B5818W
30
B5819W
40
B5817W
B5818W
B5819W
B5817W I_F=1A
I_F=3A
V_F
B5818W I_F=1A
I_F=3A
B5819W I_F=1A
I_F=3A
C_D
V_R=4V, f=1MHz
MAX
UNIT
V
1
mA
0.45
V
0.75
0.55
V
0.875
0.6
V
0.9
120
pF
JinYu
semiconductor
www.htsemi.com