B0530WS Datasheet, PDF (1/2 Pages) Diodes Incorporated – SURFACE MOUNT SCHOTTKY BARRIER DIODE

B0520WS/B0530WS/B0540WS
SCHOTTKY BARRIER DIODE
FEATURES
z Low Forward Voltage Drop
z Guard Ring Construction for Transient Protection
z High Conductance
z Also Available in Lead Free Version
MARKING: B0520WS: SD
B0530WS: SE
B0540WS: SF
SOD-323
+
-
-
Maximum Ratings @T_A=25℃
Parameter
Peak Repetitive Peak reverse voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage Reverse voltage (DC)
Average rectified output Current
Forward current surge peak
Power dissipation
Thermal Resistance Junction to Ambient
Junction temperature
Storage temperature
Voltage Rate of Change
Symbol
V_RRM
V_RWM
V_R
V_R(RMS)
I_o
I_FSM
P_D
R_θJA
T_j
T_STG
dv/dt
B0520WS
20
14
B0530WS
30
21
0.5
5.5
200
625
150
-65~+150
1000
B0540WS Unit
40
V
28
V
A
A
mW
℃/W
℃
℃
V/μS
Electrical Characteristics @T_A=25℃
Parameter
Minimum Reverse
Breakdown Voltage
Forward voltage
Reverse current
Reverse current
Capacitance between terminals
Symbol
V_(BR)R
V_F1
V_F2
V_F3
I_R1
I_R2
I_R3
I_R4
I_R5
C_T
B0520WS
20
--
--
0.3
0.385
--
75
--
250
--
--
170
B0530WS
--
30
--
0.36
0.45
--
--
80
100
500
--
170
B0540WS
--
--
40
--
0.510
0.62
--
--
10
--
20
170
Unit
V
V
μA
μA
pF
Conditions
I_R=250μA
I_R=500μA
I_R=20μA
I_F=0.1A
I_F=0.5A
I_F=1A
V_R=10V
V_R=15V
V_R=20V
V_R=30V
V_R=40V
V_R=0,f=1MHz
JinYu
semiconductor
www.htsemi.com