A94 Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ PNP ）

TRANSISTOR (PNP)
FEATURES
High voltage
SOT-89-3L
A94
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
-400
V_CEO
Collector-Emitter Voltage
-400
V_EBO
Emitter-Base Voltage
-5
I_C
Collector Current -Continuous
-0.2
P_C
Collector Power Dissipation
0.5
T_j
Junction Temperature
150
T_stg
Storage Temperature
-55 to +150
Units
V
V
V
A
W
℃
℃
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V_{(BR) CBO} I_C= -100μA, I_E=0
-400
Collector-emitter breakdown voltage
V_{(BR) CEO} I_C= -1mA,I_B=0
-400
Emitter-base breakdown voltage
V_{(BR) EBO} I_E=-100μA,I_C=0
-5
Collector cut-off current
I_CBO
V_CB=-400V, I_E=0
Collector cut-off current
I_CEO
V_CE=-400V, I_B=0
Emitter cut-off current
I_EBO
V_EB= -4V, I_C=0
h_FE(1)
V_CE=-10V, I_C=-10mA
80
DC current gain
h_FE(2)
V_CE=-10V, I_C=-1mA
70
h_FE(3)
V_CE=-10V, I_C=-100mA
60
h_FE(4)
V_CE=-10V, I_C=-50mA
80
Collector-emitter saturation voltage
V_{CE (sat)}
V_{CE (sat)}
I_C=-10mA, I_B=-1mA
I_C=-50mA, I_B=-5mA
Base-emitter saturation voltage
Transition frequency
V_{BE (sat)}
I_C=-10mA, I_B= -1mA
V_CE=-20V, I_C=-10mA
f_T
50
f =30MHz
Typ
Max Unit
V
V
V
-0.1
μA
-5
μA
-0.1
μA
300
-0.2
V
-0.3
V
-0.75
V
MHz
JinYu
semiconductor
www.htsemi.com