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| A92 Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ PNP ） | |||
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A92
TRANSISTOR (PNP)
SOT-89-3L
FEATURES
z Low Collector-Emitter Saturation Voltage
z High Breakdown Voltage
1. BASE
2. COLLECTOR
3. EMITTER
MARKING: A92
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-310
-305
-5
-500
500
250
150
-55~+150
Unit
V
V
V
mA
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
fT
Test conditions
IC=-100µA,IE=0
IC=-1mA,IB=0
IE=-100µA,IC=0
VCB=-200V,IE=0
VCE=-200V,IB=0
VCE=-300V,IB=0
VEB=-5V,IC=0
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-80mA
IC=-20mA,IB=-2mA
IC=-20mA,IB=-2mA
VCE=-20V,IC=-10mA,f=30MHz
Min Typ
-310
-305
-5
60
100
60
50
Max
-0.25
-0.25
-5
-0.1
300
-0.2
-0.9
Unit
V
V
V
µA
µA
µA
µA
V
V
MHz
JinYu
semiconductor
www.htsemi.com
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