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| A44 Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ NPN ） | |||
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A44
TRANSISTOR (NPN)
SOT-89-3L
FEATURES
z Low Collector-Emitter Saturation Voltage
z High Breakdown Voltage
1. BASE
2. COLLECTOR
3. EMITTER
MARKING: A44
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
500
400
6
300
500
250
150
-55~+150
Unit
V
V
V
mA
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V(BR)CBO
V(BR)CEO*
V(BR)EBO
ICBO
IEBO
hFE(1)*
hFE(2)*
hFE(3)*
hFE(4)*
Collector-emitter saturation voltage
VCE(sat)*
Base-emitter saturation voltage
VBE(sat)*
Collector output capacitance
Cob
Emitter input capacitance
Cib
*Pulse test: pulse width â¤300μs, duty cycle⤠2.0%.
Test conditions
IC=100µA,IE=0
IC=1mA,IB=0
IE=10µA,IC=0
VCB=400V,IE=0
VEB=4V,IC=0
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
VCE=10V, IC=100mA
IC=1mA,IB=0.1mA
IC=10mA,IB=1mA
IC=50mA,IB=5mA
IC=10mA,IB=1mA
VCB=20V, IE=0, f=1MHz
VBE=0.5V, IC=0, f=1MHz
Min Typ Max
500
400
6
0.1
0.1
40
50
200
45
40
0.4
0.5
0.75
0.75
7
130
Unit
V
V
V
µA
µA
V
V
V
V
pF
pF
JinYu
semiconductor
www.htsemi.com
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