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| A42 Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ NPN ） | |||
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A42
TRANSISTOR (NPN)
SOT-89-3L
FEATURES
z Low Collector-Emitter Saturation Voltage
z High Breakdown Voltage
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
310
305
5
500
500
250
150
-55~+150
Unit
V
V
V
mA
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
fT
Test conditions
IC=100µA,IE=0
IC=1mA,IB=0
IE=100µA,IC=0
VCB=200V,IE=0
VCE=200V,IB=0
VCE=300V,IB=0
VEB=5V,IC=0
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=30mA
IC=20mA,IB=2mA
IC=20mA,IB=2mA
VCE=20V,IC=10mA, f=30MHz
Min Typ
310
305
5
60
80
75
50
Max
0.25
0.25
5
0.1
250
0.2
0.9
Unit
V
V
V
µA
µA
µA
µA
V
V
MHz
CLASSIFICATION OF hFEï¼2ï¼
RANK
RANGE
MARKING
A
80â100
B1
100â150
B2
150â200
A42
C
200â250
JinYu
semiconductor
www.htsemi.com
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