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| A1015 Datasheet, PDF (1/2 Pages) Weitron Technology – PNP General Purpose Transistors | |||
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A01 51
TRANSISTOR (PNP)
FEATURES
z High voltage and high current
z Excellent hFE Linearity
z Low niose
z Complementary to C1815
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
MARKING: BA
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
Parameter
Value
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
-50
-50
-5
150
200
125
-55-125
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Test conditions
IC= -100u A, IE=0
IC= -0.1mA, IB=0
IE= -100 u A, IC=0
VCB=-50V , IE=0
VCE= -50V , IB=0
VEB=- 5V, IC=0
VCE=-6V, IC= -2mA
IC=-100 mA, IB= -10mA
IC=-100 mA, IB= -10mA
VCE=-10V, IC= -1mA
f=30MHz
MIN
TYP
-50
-50
-5
130
80
CLASSIFICATION OF hFE
Rank
Range
L
130-200
H
200-400
Units
V
V
V
mA
mW
â
â
MAX
-0.1
-0.1
-0.1
400
-0.3
-1.1
UNIT
V
V
V
uA
uA
uA
V
V
MHz
JinYu
semiconductor
www.htsemi.com
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