2SK3018 Datasheet, PDF (1/4 Pages) Rohm – Small switching (30V, 0.1A)

N-Channel Enhancement Mode MOSFET
2SK3018
• Features
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive (2.5V) makes this
device ideal for portable equipment.
4) Easily designed drive circuits.
5) Easy to parallel.
• Applications
Interfacing, switching (30V, 100mA)
• Structure
Silicon N-channel
MOSFET
• External dimensions
è
æ
ç
ç
æ
è
Units:mm
SOT-23
SOT-323
æ. Gate ç. Source è. Drain
• Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Reverse
current
drain ^Continuous
Pulsed
Total power dissipation(Tc=25°C)
Channel temperature
V_DSS
V_GSS
I_D
I_DP*1
I_DR
I_DRP*1
P_D*2
Tch
Storage temperature
Tstg
*1Pw›10µs,Duty Cycle›

*2With each pin mounted on the recommended lands
Limits
30
20
100
200
100
200
200
150
-55~+150
Unit
V
V
mA
mA
mA
mA
mW
°C
°C
• Equivalent circuit
Drain
Gate
*Gate
Protection
Diode
Source
*A protection diode is included between the
gate and the source terminals to protect the
diode against static electricity when the product
is in use. Use a protection circuit when the fixed
voltages are exceeded.
JinYu
semiconductor
www.htsemi.com