 English |
|
|
|
|
|
|
|
| 2SD965A Datasheet, PDF (1/2 Pages) Daya Electric Group Co., Ltd. – SOT-89 Plastic-Encapsulate Transistors | |||
| |||
|
2SD965A
TRANSISTOR (NPN)
FEATURES
z Audio amplifier
z Flash unit of camera
z Switching circuit
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current -Continuous
5
A
PC
Collector Power Dissipation
750
mW
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO IC=0.1mA, IE=0
40
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA. IB=0
30
Emitter-base breakdown voltage
V(BR)EBO IE= 10μA, IC=0
7
Collector cut-off current
ICBO
VCB= 10V,IE=0
Emitter cut-off current
IEBO
VEB=7V, IC=0
hFE(1) VCE= 2 V, IC=1mA
DC current gain
hFEâ(2) VCE= 2V, IC = 500mA
230
hFE(3) VCE= 2V, IC =2A
150
Collector-emitter saturation voltage
VCE(sat) IC=3A, IB=0.1A
Transition frequency
fT
VCE=6V, IC=50mA
Out capacitance
Cob VCB=20 V , IE=0, f=1MHZ
TYP
200
150
MAX
0.1
0.1
UNIT
V
V
V
μA
μA
800
1
V
MHz
50
pF
CLASSIFICATION OF hFE(2)
Rank
Q
Range
230-380
R
340-600
S
560-800
JinYu
semiconductor
www.htsemi.com
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese