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| 2SD874A Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic Encapsulated Transistor | |||
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2SD874A
TRANSISTOR (NPN)
FEATURES
z Large collector power dissipation PC
z Low collector-emitter saturation voltage VCE(sat)
z Complementary to 2SB766A
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
Parameter
Value Units
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
60
V
50
V
5
V
1
A
0.5
W
150
â
-55-150 â
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO IC=10μA,IE=0
60
Collector-emitter breakdown voltage
V(BR)CEO IC=2mA,IB=0
50
Emitter-base breakdown voltage
V(BR)EBO IE=10μA,IC=0
5
Collector cut-off current
ICBO
VCB=20V,IE=0
Emitter cut-off current
IEBO
VEB=4V,IC=0
DC current gain
hFE(1) VCE=10V,IC=500mA
85
hFE(2) VCE=5V,IC=1A
50
Collector-emitter saturation voltage
VCE(sat) IC=500mA,IB=50mA
Base-emitter saturation voltage
VBE(sat) IC=500mA,IB=50mA
Transition frequency
fT
VCE=10V,IC=50mA,f=200MHz
Collector output capacitance
Cob
VCB=10V,IE=0,f=1MHz
TYP
200
20
MAX
0.1
0.1
340
UNIT
V
V
V
μA
μA
0.4
V
1.2
V
MHz
pF
CLASSIFICATION OF hFE(1)
Rank
Range
Marking
Q
85-170
YQ
R
120-240
YR
S
170-340
YS
JinYu
semiconductor
www.htsemi.com
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