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| 2SD874 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency power amplification) | |||
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TRANSISTOR (NPN)
FEATURES
z Low Collector-Emitter Saturation Voltage
z Large Collector Power Dissipation
z Mini Power Type Package
2SD874
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
30
25
5
1
500
250
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
Min Typ
V(BR)CBO IC=10µA,IE=0
30
V(BR)CEO IC=2mA,IB=0
25
V(BR)EBO IE=10µA,IC=0
5
ICBO
VCB=20V,IE=0
IEBO
VEB=4V,IC=0
hFE(1)
VCE=10V, IC=500mA
85
hFE(2)
VCE=5V, IC=1A
50
VCE(sat) IC=500mA,IB=50mA
VBE(sat) IC=500mA,IB=50mA
fT
VCE=10V,IC=50mA, f=200MHz
200
Cob
VCB=10V, IE=0, f=1MHz
Max
0.1
0.1
340
0.4
1.2
20
CLASSIFICATION OF hFEï¼1ï¼
RANK
RANGE
MARKING
Q
85â170
ZQ
R
120â240
ZR
S
170â340
ZS
Unit
V
V
V
µA
µA
V
V
MHz
pF
JinYu
semiconductor
www.htsemi.com
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