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| 2SD596 Datasheet, PDF (1/3 Pages) NEC – AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD | |||
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2SD596
TRANSISTOR (NPN)
FEATURES
z High DC Current gain.
z Complimentary to 2SB624
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
30
25
5
700
200
150
-55-150
Units
V
V
V
mA
mW
â
â
SOT-23
1.BASE
2.EMITTER
3.COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector Output Capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)*
hFE(2)*
VCE(sat) *
VBE *
fT
Cob
Test conditions
IC=100μA, IE=0
IC= 1mA, IB=0
IE= 100μA, IC=0
VCB=30V , IE=0
VEB= 5V , IC=0
VCE= 1V, IC= 100mA
VCE=1V, IC= 700mA
IC=700mA, IB=70mA
VCE=6V, IC=10mA
VCE=6V, IC= 10mA
VCB=6V,IE=0,f=10MHZ
MIN
30
25
5
110
50
0.6
170
* Pulse test : Pulse width â¤350μs,Duty Cycleâ¤2%.
TYP MAX UNIT
V
V
V
0.1 μA
0.1 μA
400
0.6
V
0.7
V
MHz
12
pF
CLASSIFICATION OF hFE(1)
Marking
DV1
Range
110-180
DV2
135-220
DV3
170-270
DV4
200-320
DV5
250-400
JinYu
semiconductor
www.htsemi.com
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