2SD2142 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic Plastic-Encapsulate Transistor

2SD2142
TRANSISOR (NPN)
SOT–23
FEATURES
 Darlington Connection for a High h_FE
 High Input Impedance
MARKING: R1M
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
40
VCEO Collector-Emitter Voltage
32
VEBO Emitter-Base Voltage
12
IC
Collector Current
300
PC
Collector Power Dissipation
200
RΘJA Thermal Resistance From Junction To Ambient
625
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=100µA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=10mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=100µA, IC=0
Collector cut-off current
ICBO
VCB=30V, IE=0
Emitter cut-off current
IEBO
VEB=12V, IC=0
DC current gain
hFE
VCE=3V, IC=100mA
Collector-emitter saturation voltage
VCE(sat) IC=200mA, IB=0.2mA
Transition frequency
fT
VCE=5V,IC=10mA, f=100MHz
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
Min Typ
40
32
12
5000
200
2.5
Max
0.1
0.1
1.4
Unit
V
V
V
µA
µA
V
MHz
pF
JinYu
semiconductor
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