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| 2SD2114 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic Encapsulated Transistor | |||
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TRANSISTOR (NPN)
FEATURES
z High DC current gain.
z High emitter-base voltage.
z Low VCE (sat).
MARKING: BBV,BBW
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
25
20
12
0.5
0.25
150
-55-150
Units
V
V
V
A
W
â
â
2SD2114
SOT-23
1. BASE
2.EMITTER
3.COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
output capacitance
On resistance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
R(on)
Test conditions
IC=10μA, IE=0
IC =1mA, IB=0
IE=10μA, IC=0
VCB=20 V, IE=0
VEB=10V,IC=0
VCE=3V, IC=10mA
IC= 500mA, IB=20 mA
VCE=10V, IC=50mA
f=100MHz
VCB=10V,IE=0,f=1MHz
Vin=0.1V(rms),IB=1mA,
f=1KHZ
MIN
25
20
12
820
TYP MAX UNIT
V
V
V
0.5 μA
0.5 μA
2700
0.4
V
350
MHz
8
pF
0.8
Ω
CLASSIFICATION OF hFE
Rank
Range
V
820-1800
W
1200-2700
JinYu
semiconductor
www.htsemi.com
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