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| 2SD2098 Datasheet, PDF (1/3 Pages) Rohm – Low VCE(sat) Transistor(Strobe flash) | |||
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2SD2098
FEATURES
z Excellent DC current gain characteristics
z Complements the 2SB1386
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
50
20
6
5
500
150
-55-150
Units
V
V
V
A
mW
â
â
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF hFE
Rank
Range
Marking
Symbol Test conditions
V(BR)CBO IC=50μA,IE=0
V(BR)CEO IC=1mA,IB=0
V(BR)EBO IE=50μA, =0
ICBO
VCB=40V,IE=0
IEBO
VEB=5V,IC=0
hFE
VCE=2V,IC=0.5A
VCE(sat) IC=4A,IB=100mA
fT
VCE=6V,IC=50mA,f=100MHz
Cob
VCB=20V,IE=0,f=1MHz
Q
120-270
AHQ
MIN TYP MAX UNIT
50
V
20
V
6
V
0.5
μA
0.5
μA
120
390
1
V
150
MHz
30
pF
R
180-390
AHR
JinYu
semiconductor
www.htsemi.com
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