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| 2SD1766 Datasheet, PDF (1/2 Pages) Rohm – Medium Power Transistor (32V, 2A) | |||
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2SD1766
TRANSISTOR (NPN)
FEATURES
z Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A)
z Complements to 2SB1188
SOT-89
1. BASE
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
32
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
2
A
PC
Collector dissipation
500
mW
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
2. COLLECTOR
3. EMITTER
1
2
3
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V(BR)CBO IC=50μA, IE=0
V(BR)CEO IC=1mA, IB=0
V(BR)EBO IE=50μA, IC=0
ICBO
VCB=20V, IE=0
IEBO
VEB=4V, IC=0
hFE(1) VCE=3V, IC=500mA
VCE(sat) IC=2A, IB=0.2A
fT
VCE=5V, IC=50mA, f=100MHz
Cob
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
40
V
32
V
5
V
1
μA
1
μA
82
390
0.8
V
100
MHz
30
pF
CLASSIFICATION OF hFE(1)
Rank
P
Range
82-180
Marking
DBP
Q
120-270
DBQ
R
180-390
DBR
JinYu
semiconductor
www.htsemi.com
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