 English |
|
|
|
|
|
|
|
| 2SD1119 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency power amplification0 | |||
| |||
|
2SD1119
TRANSISTOR (NPN)
FEATURES
z Low collector-emitter saturation voltage VCE(sat)
z Satisfactory operation performances at high efficiency with the low
voltage power supply.
MAXIMUM RATINGS (TA=25â unless otherwise noted)
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Value
40
25
7
3
500
150
-55-150
Units
V
V
V
A
mW
â
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V(BR)CBO IC =100μA, IE=0
V(BR)CEO IC =1mA, IB=0
V(BR)EBO IE=10μA, IC=0
ICBO
VCB=10V, IE=0
IEBO
VEB=6V, IC=0
hFE(1) VCE=2V, IC=500mA
hFE(2) VCE=2V, IC=2A
VCE(sat) IC=3A, IB=0.1A
fT
VCE=6V, IC=50mA, f=200MHz
Cob
VCB=20V, f=1MHz
MIN TYP MAX UNIT
40
V
25
V
7
V
0.1
μA
0.1
μA
230
600
150
1
V
150
MHz
50
pF
CLASSIFICATION OF hFE(1)
Rank
Range
Marking
Q
230-380
TQ
R
340-600
TR
JinYu
semiconductor
www.htsemi.com
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese