2SC5345 Datasheet, PDF (1/2 Pages) AUK corp – NPN Silicon Transistor (RF amplifier)

2SC5345
TRANSISTOR (NPN)
FEATURES
z RF amplifier
z High current transition frequency fT=550MHz(Typ.),
[VCE=6V, IE=-1mA]
z Low output capacitance :
Cob=1.4pF(Typ.) [VCB=6V, IE=0]
z Low base time constant and high gain
z Excellent noise response
Marking: 5345
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
V_CBO
Collector-Base Voltage
30
V
V_CEO
Collector-Emitter Voltage
20
V
V_EBO
Emitter-Base Voltage
4
V
I_C
Collector Current
20
mA
P_C
Collector Power dissipation
300
mW
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V_(BR)CBO IC=10μA, IE=0
30
Collector-emitter breakdown voltage
V_(BR)CEO IC=5mA, IB=0
20
Emitter-base breakdown voltage
V_(BR)EBO IE=10μA, IC=0
4
Collector cut-off current
I_CBO
V_CB=30V, I_E=0
Emitter cut-off current
I_EBO
V_EB=4V, I_C=0
DC current gain
h_FE
V_CE=6V, I_C=1mA
40
Collector-emitter saturation voltage
V_CE(sat) IC=10mA, IB=1mA
Transition frequency
f_T
V_CE=6V, I_C=1mA
Collector output capacitance
C_ob
V_CB=6V, I_E=0, f=1MHz
TYP
550
1.4
MAX
0.5
0.5
240
0.3
UNIT
V
V
V
μA
μA
V
MHz
pF
CLASSIFICATION OF h_FE
Rank
Range
R
40-80
O
70-140
Y
120-240
JinYu
semiconductor
www.htsemi.com