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2SC5343 Datasheet, PDF (1/2 Pages) AUK corp – NPN Silicon Transistor (General small signal amplifier)
2SC5343
TRANSISTOR (NPN)
FEATURES
z Excellent hFE Linearity
z Low Noise.
SOT-23
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
150
mA
Ib
Base Current -Continuous
50
mA
PC
Collector Power dissipation
0.2
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=100μA,IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=10mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=10μA,IC=0
Collector cut-off current
ICBO
VCB=60V,IE=0
Emitter cut-off current
IEBO
VEB=5V,IC=0
DC current gain
hFE(1) VCE=6V,IC=2mA
Collector-emitter saturation voltage
VCE(sat) IC=100mA,IB=10mA
Transition frequency
fT
VCE=10V,IC=1mA
Collector output capacitance
Noise figure
Cob
VCB=10V,IE=0,f=1MHz
VCE=6V,Ic=0.1mA,
NF
f=1KHZ,Rg=10KΩ
CLASSIFICATION OF hFE
Rank
O
Y
Range
70-140
120-240
MIN TYP MAX UNIT
60
V
50
V
5
V
0.1
μA
0.1
μA
70
700
0.1 0.25
V
80
MHz
3.5
pF
10
dB
G
200-400
L
300-700
JinYu
semiconductor
www.htsemi.com