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| 2SC4215 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – NPN EPITAXIAL PLANAR TYPE (HIGH FREQUENCY FM, RF, MIX, IF AMPLIFIERAPPLICATIONS) | |||
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2SC4215
TRANSISTOR (NPN)
FEATURES
z Small reverse transfer capacitance: Cre= 0.55pF(typ.)
z Low noise figure: NF=2dB (typ.) (f=100 MHz)
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current -Continuous
PC
Collector Power Dissipation
TJ
Junction Temperature
Tstg
Storage Temperature
Value
40
30
4
20
100
150
-55-150
Units
V
V
V
mA
mW
â
â
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO IC=100μA,IE=0
40
Collector-emitter breakdown voltage
V(BR)CEO IC=1mA,IB=0
30
Emitter-base breakdown voltage
V(BR)EBO IE=100μA,IC=0
4
Collector cut-off current
ICBO
VCB=40V,IE=0
Emitter cut-off current
IEBO
VEB=4V,IC=0
DC current gain
hFE
VCE=6V,IC=1mA
40
Collector-base time constant
Cc.rbbâ² VCE=6V,IC=1mA, f=30MHZ
Transition frequency
fT
VCE=6V,IC=1mA,
260
Reverse transfer capacitance
Cre
VCB=10V,f=1MHz
Noise figure
Power gain
NF
VCC=6V,Ic=1mA,f=100MHZ
Gpe
17
TYP
550
0.55
2
23
MAX
0.1
0.5
200
25
5
UNIT
V
V
V
μA
μA
ps
MHz
pF
dB
dB
CLASSIFICATION OF hFE
Rank
Range
Marking
R
40-80
QR
O
70-140
QO
Y
100-200
QY
JinYu
semiconductor
www.htsemi.com
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