2SC4180 Datasheet, PDF (1/1 Pages) NEC – AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

2SC4180
TRANSISTOR (NPN)
FEATURES
 High DC Current Gain
APPLICATIONS
 General Purpose Amplification
SOT–323
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
120
VCEO Collector-Emitter Voltage
120
VEBO Emitter-Base Voltage
5
IC
Collector Current
50
PC
Collector Power Dissipation
150
RΘJA Thermal Resistance From Junction To Ambient
833
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)*
hFE(2)
VCE(sat)
VBE
fT
IC=100µA, IE=0
IC=1mA, IB=0
IE=100µA, IC=0
VCB=120V, IE=0
VEB=5V, IC=0
VCE=6V, IC=1mA
VCE=6V, IC=0.1mA
IC=10mA, IB=1mA
VCE=6V, IC=1mA
VCE=6V, IC=1mA
Collector output capacitance
Cob
VCB=30V, IE=0, f=1MHz
*Pulse test: pulse width ≤350μs, duty Cycle≤ 2.0%.
Min
Typ
120
120
5
135
100
0.55
50
Max
50
50
900
0.3
0.65
2.5
Unit
V
V
V
nA
nA
V
V
MHz
pF
CLASSIFICATION OF hFE(1)
RANK
RANGE
MARKING
D15
135–270
D15
D16
200–400
D16
D17
300–600
D17
D18
450–900
D18
JinYu
semiconductor
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