2SC4116 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

2SC4116
TRANSISTOR (NPN)
FEATURES
z High voltage and high current
z Excellent h_FE linearity
z High h_FE
z Low noise
z Complementary to 2SA1586
MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Junction and Storage Temperature
Value
60
50
5
150
100
150
-55-150
Units
V
V
V
mA
mW
℃
℃
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
f_T
C_ob
NF
Test conditions
I_C=100μA,I_E=0
I_C=1mA,I_B=0
I_E=100μA,I_C=0
V_CB=60V,I_E=0
V_EB=5V,I_C=0
V_CE=6V,I_C=2mA
I_C=100mA,I_B=10mA
V_CE=10V,I_C=1mA,
V_CB=10V,I_E=0,f=1MHz
V_CE=6V,I_c=0.1mA,
f=1KH_Z,Rg=10KΩ
MIN TYP
60
50
5
70
80
MAX
0.1
0.1
700
0.25
3.5
10
UNIT
V
V
V
μA
μA
V
MHz
pF
dB
CLASSIFICATION OF h_FE
Rank
Range
Marking
O
70-140
LO
Y
120-240
LY
GR
200-400
LG
BL
350-700
LL
JinYu
semiconductor
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