2SC4102 Datasheet, PDF (1/1 Pages) Rohm – High-voltage Amplifier Transistor(120V, 50mA)

2SC4102
TRANSISTOR (NPN)
FEATURES
 High Breakdown Voltage
 Complements the 2SA1579
SOT–323
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
120
VCEO Collector-Emitter Voltage
120
VEBO Emitter-Base Voltage
5
IC
Collector Current
50
PC
Collector Power Dissipation
200
RΘJA Thermal Resistance From Junction To Ambient
625
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Test conditions
IC=50µA, IE=0
IC=1mA, IB=0
IE=50µA, IC=0
VCB=100V, IE=0
VEB=4V, IC=0
VCE=6V, IC=2mA
IC=10mA, IB=1mA
VCE=12V,Ic=2mA ,f=100MHz
VCB=12V, IE=0, f=1MHz
Min
Typ
120
120
5
180
140
2.5
CLASSIFICATION OF hFE
RANK
R
RANGE
180–390
MARKING
TR
S
270–560
TS
Max
500
500
560
0.5
Unit
V
V
V
nA
nA
V
MHz
pF
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semiconductor
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