|
2SC4098 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – High-frequency Amplifier Transistor | |||
|
2SC4098
TRANSISTOR (NPN)
FEATURES
ï¬ Low Collector Capacitance
ï¬ High Gain
SOTâ323
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
40
VCEO Collector-Emitter Voltage
25
VEBO Emitter-Base Voltage
5
IC
Collector Current
50
PC
Collector Power Dissipation
200
RÎJA Thermal Resistance From Junction To Ambient
625
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55ï½+150
Unit
V
V
V
mA
mW
â/W
â
â
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Test conditions
IC=50µA, IE=0
IC=1mA, IB=0
IE=50µA, IC=0
VCB=24V, IE=0
VEB=3V, IC=0
VCE=6V, IC=1mA
IC=10mA, IB=1mA
VCE=6V,Ic=1mA ,f=100MHz
VCB=6V, IE=0, f=1MHz
Min
Typ
40
25
5
56
150
CLASSIFICATION OF hFE
RANK
N
RANGE
56â120
MARKING
AN
P
82â180
AP
Q
120â270
AQ
Max
500
500
270
0.3
2.2
Unit
V
V
V
nA
nA
V
MHz
pF
JinYu
semiconductor
www.htsemi.com
|