2SC4097 Datasheet, PDF (1/1 Pages) Rohm – Medium Power Transistor (32V, 0.5A)

2SC4097
TRANSISTOR (NPN)
FEATURES
z High I_CMax. I_CMax=0.5A
z Low V_CE(sat).Optimal for low voltage operation.
z Complements the 2SA1577
MAXIMUM RATINGS (T_A=25℃unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
40
32
5
500
200
150
-55-150
Units
V
V
V
mA
mW
℃
℃
SOT-323
3
1
2
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V_(BR)CBO I_C=100μA,I_E=0
40
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0
32
Emitter-base breakdown voltage
V_(BR)EBO I_E=100μA,I_C=0
5
Collector cut-off current
I_CBO
V_CB=20V,I_E=0
Emitter cut-off current
I_EBO
V_EB=4V,I_C=0
DC current gain
h_FE
V_CE=3V,I_C=10mA
82
Collector-emitter saturation voltage
V_CE(sat) I_C=500mA, I_B=50mA
Transition frequency
f_T
V_CE=5V, I_C=20mA,f =100MHz
Collector Output Capacitance
Cob V_CB=10V,I_E=0,f=1MHZ
TYP
250
6
MAX
1
1
390
0.4
UNIT
V
V
V
μA
μA
V
MHz
pF
CLASSIFICATION OF h_FE
Rank
Range
MARKING
P
82-180
CP
Q
120-270
CQ
R
180-390
CR
JinYu
semiconductor
www.htsemi.com